Title :
Fabrication of undoped AlGaAs/GaAs electron quantum dots
Author :
See, Andrew M. ; Klochan, Oleh ; Micolich, Adam P. ; Hamilton, Alex R. ; Aagesen, Martin ; Lindelof, Poul Erik
Author_Institution :
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
Abstract :
We have fabricated a quantum dot single electron transistor based on an AlGaAs/GaAs heterostructure without any modulation doping. Our device is very stable from an electronic perspective, with clear Coulomb blockade oscillations, and minimal drift in conductance when the device is set to the midpoint of a Coulomb blockade peak and held at constant gate bias. Bias spectroscopy measurements show typical Coulomb `diamonds´ free of any significant charge fluctuation noise. We also observe excited state transport in our device.
Keywords :
Coulomb blockade; III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor heterojunctions; semiconductor quantum dots; single electron transistors; AlGaAs-GaAs; Coulomb blockade oscillations; bias spectroscopy; charge fluctuation noise; conductance drift; constant gate bias; excited state transport; single electron transistor; undoped electron quantum dots; Diamond-like carbon; Epitaxial layers; Gallium arsenide; Logic gates; Noise; Performance evaluation; Quantum dots;
Conference_Titel :
Nanoscience and Nanotechnology (ICONN), 2010 International Conference on
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4244-5261-3
Electronic_ISBN :
978-1-4244-5262-0
DOI :
10.1109/ICONN.2010.6045253
