Title :
A review of DASIE code family: contribution to SEU/MBU understanding
Author :
Hubert, G. ; Buard, N. ; Weulersse, C. ; Carriere, T. ; Palau, M.-C. ; Palau, J.-M. ; Lambert, D. ; Baggio, J. ; Wrobel, F. ; Saigne, F. ; Gaillard, R.
Author_Institution :
Corporate Res. Center, EADS, Suresnes, France
Abstract :
DASIE (the detailed analysis of secondary ion effect) is the name of a code family dedicated to the SEE rate prediction. This paper presents a review of DASIE code family and its contributions to SEU (single event upset) and MBU (multiple bit upset) understanding.
Keywords :
SRAM chips; integrated circuit testing; radiation effects; DASIE code family; SEE rate prediction; SRAM chips; integrated circuit testing; multiple bit upset; radiation effects; secondary ion effects; single event upset; Aerospace electronics; Databases; Energy exchange; Error analysis; Neutrons; Nuclear power generation; Protons; Silicon; Single event upset; Transportation;
Conference_Titel :
On-Line Testing Symposium, 2005. IOLTS 2005. 11th IEEE International
Print_ISBN :
0-7695-2406-0
DOI :
10.1109/IOLTS.2005.12
