Negative-resistance device using organic thin films

Author

Kawamoto, A. ; Suzuoki, Y. ; Mizutani, Tomoko

Author_Institution

Technol. Dev. Center, Nagaoka Univ. of Technol., Niigata, Japan

Volume

1

fYear

2003

fDate

1-5 June 2003

Firstpage

100

Abstract

A new negative-resistance device which had a structure of anode/insulating layer/hole transport layer/cathode was fabricated by thermal CVD and vacuum deposition. Its current-voltage characteristics at room temperature showed a remarkable negative resistance. A current peak was observed around 5∼6V with increasing voltage. It decreased with increasing the width of an insulating layer. The peak voltage also increased with increasing the ionization potential of dye or the barrier of hole tunneling. The current peak decreased with the difference between Fermi level of the anode and ionization potential of insulating layer. These suggest that the negative resistance around 5∼6V may be explained by the tunneling phenomenon.

Keywords

Fermi level; chemical vapour deposition; dyes; insulating thin films; ionisation potential; negative resistance devices; tunnelling; vacuum deposition; 293 to 298 K; 5 to 6 V; Fermi level; anode/insulating layer/hole transport layer/cathode structure; barrier; current-voltage properties; dye; hole tunneling; insulating layer; ionization potential; negative-resistance device; organic thin films; room temperature; thermal CVD; vacuum deposition; Anodes; Cathodes; Electrodes; Insulation; Ionization; Temperature; Thermal resistance; Thin film devices; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 2003. Proceedings of the 7th International Conference on

ISSN

1081-7735

Print_ISBN

0-7803-7725-7

Type

conf

DOI

10.1109/ICPADM.2003.1218362

Filename

1218362