DocumentCode
1819218
Title
Review of various gamma radiation dosimeters based on thin and thick films of metal oxides and polymer materials
Author
Arshak, Arousian ; Arshak, Khalil ; Korostynska, Olga ; Zleetni, Saleh
Author_Institution
Appl. Phys. Dept., Limerick Univ., Ireland
Volume
1
fYear
2003
fDate
19-25 Oct. 2003
Firstpage
78
Abstract
This work reviews various thick and thin film radiation sensors made to date at University of Limerick. Numerous oxides such as NiO, LaFeO3, CeO2, TeO2, In2O3, SiO2, MnO etc. and their mixtures in different proportions were used. Polymers such as CuPc, NiPc, MnPc and CoPc were also studied in our laboratories. Thin and thick film devices were made in the form of resistor- and capacitor-type structures, structures with interdigitated electrodes, pn- junctions and transistors. The 60Co and 137Cs sources were used to expose the samples to radiation. Current-voltage characteristics, optical absorption spectra, Raman spectra, SEM, XRD measurements etc. for the samples were recorded after each exposure procedure and values of radiation damage were estimated. Mixing materials in different proportions was found to change the sensitivity of these devices. In general thin film devices were found to be more sensitive to lower doses of radiation than the counterpart the thick films. Properties of thick film devices were restored after annealing. This suggests that these films can be reused on repeatable basis. Thin film devices can hardly undergo heat treatment as diffusion of the materials occurs. It was experimentally demonstrated that it is possible to fabricate a device that would satisfy the requirement of particular application, such as the sensitivity to γ-radiation exposure and working dose region. Based on the above given data, these structures are therefore might be regarded as a cost-effective alternative for room temperature real time γ-radiation dosimetry.
Keywords
Raman spectra; X-ray diffraction; dosimeters; gamma-ray effects; polymer films; scanning electron microscopy; thick film devices; thin film devices; CeO2; In2O3; LaFeO3; MnO; NiO; Raman spectra; SEM; SiO2; TeO2; XRD; capacitor-type structures; diffusion; gamma radiation dosimeters; heat treatment; interdigitated electrodes; metal oxides; optical absorption spectra; pn-junctions; polymer materials; resistor-type structures; thick film devices; thin film devices; transistors; Electrodes; Gamma rays; Inorganic materials; Laboratories; Polymer films; Thick film devices; Thick film sensors; Thick films; Thin film devices; Thin film sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2003 IEEE
ISSN
1082-3654
Print_ISBN
0-7803-8257-9
Type
conf
DOI
10.1109/NSSMIC.2003.1352002
Filename
1352002
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