Title :
Intrinsic Class-F RF GaN power amplifier with a commercial transistor based on a modified “hybrid” approach
Author :
Liu, Song ; Schreurs, Dominique
Author_Institution :
Div. ESAT-TELEMIC, Univ. of Leuven, Leuven, Belgium
Abstract :
This paper presents an intrinsic high efficiency Class-F power amplifier with a commercial packaged transistor (CGH55015F from Cree). A recently proposed “hybrid” approach for PA design is adopted with modification. The current generator characteristic is extracted from low frequency simulation. The designed power amplifier achieves 79.2% power added efficiency (PAE) at 1 GHz with 40.3 dBm output power.
Keywords :
III-V semiconductors; UHF power amplifiers; UHF transistors; gallium compounds; wide band gap semiconductors; CGH55015F; GaN; PA design; commercial packaged transistor; efficiency 79.2 percent; frequency 1 GHz; generator characteristic; intrinsic class-F RF power amplifier; intrinsic high efficiency Class-F power amplifier; modified hybrid approach; power added efficiency; Cable TV; Current measurement; Gallium nitride; Microwave amplifiers;
Conference_Titel :
Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC), 2012 Workshop on
Conference_Location :
Dublin
Print_ISBN :
978-1-4673-2950-7
Electronic_ISBN :
978-1-4673-2948-4
DOI :
10.1109/INMMIC.2012.6331925
