DocumentCode :
1819524
Title :
Capacitance-voltage characteristics of the CdS/CdTe/Te heterojunctions
Author :
Maticiuc, N. ; Spalatu, N. ; Potlog, T.
Author_Institution :
Phys. Dept., Moldova State Univ., Chisinau
Volume :
2
fYear :
2008
fDate :
13-15 Oct. 2008
Firstpage :
317
Lastpage :
320
Abstract :
CdS/CdTe/Te heterojunction have been studied by capacitance-voltage measurements over the temperature range 293 K-393 K. The potential of diffusion, profile of the ionized-charge concentration in the space charge region of heterojunction and its thickness are derived from the heterojunction capacitance measured at different bias voltages. The charge carrier concentrations calculated from (S/C)2 = f(U) for low and high voltage ranges, respectively are (1-3)ldr1014 cm-3 and it is associated with the volume concentration of CdTe and (2-5) 1013 cm-3 which corresponds to the region of interface of the CdS/CdTe/.
Keywords :
II-VI semiconductors; cadmium compounds; carrier density; diffusion; elemental semiconductors; semiconductor heterojunctions; space charge; tellurium; tellurium compounds; wide band gap semiconductors; CdS-CdTe-Te; capacitance-voltage characteristics; charge carrier concentrations; diffusion; heterojunctions; ionized-charge concentration; space charge region; temperature 293 K to 393 K; Capacitance measurement; Capacitance-voltage characteristics; Charge measurement; Current measurement; Heterojunctions; Space charge; Tellurium; Temperature distribution; Temperature measurement; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2008. CAS 2008. International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4244-2004-9
Type :
conf
DOI :
10.1109/SMICND.2008.4703413
Filename :
4703413
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1819524
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