Improvement of RF Performance by Using Tunnel Diode Body Contact Structure in PD SOI nMOSFETs

Author

Kai Lu ; Jing Chen ; Jiexin Luo ; Jun Liu ; Qingqing Wu ; Zhan Chai ; Xi Wang

Author_Institution

State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China

Volume

35

Issue

1

fYear

2014

fDate

Jan. 2014

Firstpage

15

Lastpage

17

Abstract

Radio-frequency (RF) performance of multi-finger partially depleted silicon-on-insulator (SoI) nMOSFETs with tunnel diode body contact (TDBC) structure is investigated in this letter. The TDBC structure suppresses floating-body effect and body instability significantly and shows less drain conductance degradation with respect to FB and TB devices. The peak cutoff frequency (fT) and maximum oscillation frequency (fMAX) of TDBC devices are 96.4 and 132.8 GHz, respectively. Due to lower parasitic resistances and capacitances, the device with TDBC structures represents an improvement of 10% for the fT and of 90% for the fMAX compared with conventional T-gate body-contact devices. The investigation results indicate that TDBC SoI MOSFETs are a good candidate for analog and RF applications.

Keywords

MOSFET; silicon-on-insulator; tunnel diodes; FB devices; PD SOI nMOSFET; RF performance; T-gate body-contact devices; TB devices; TDBC structure; analog applications; body instability suppression; floating-body effect suppression; frequency 132.8 GHz; frequency 96.4 GHz; multifinger partially depleted silicon-on-insulator; parasitic capacitances; parasitic resistances; radiofrequency performance; tunnel diode body contact structure; Degradation; Immune system; Logic gates; MOSFET; Performance evaluation; Radio frequency; Silicon-on-insulator; Radio-frequency (RF); body contact; floating body; partially depleted silicon-on-insulator; tunnel diode;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2291878

Filename

6680609