Title :
Nondegenerate differential transmission of semiconductors: correlation-induced resonances
Author :
Phillips, Malcolm ; Hailin Wang
Author_Institution :
Dept. of Phys., Oregon Univ., Eugene, OR, USA
Abstract :
Summary form only given. It is well known that correlations between excitons strongly affect the optical properties of resonantly excited semiconductors. Few studies, however, have considered effects of correlations between excitons and unbound electrons or holes when a semiconductor is excited above the band gap. In this paper, we report the observation of a surprising correlation-induced resonance (CIR) that appears in differential transmission spectra of semiconductor quantum wells excited above the band gap. The properties of this CIR show that it is not due to biexciton formation, but instead may arise from correlations between excitons and unbound electrons or holes.
Keywords :
III-V semiconductors; excitons; gallium arsenide; light transmission; optical pumping; semiconductor quantum wells; time resolved spectra; visible spectra; GaAs; HH excitons; absorption spectrum; biexciton-induced absorption resonance; correlation-induced resonances; excitons; lattice temperature; multiple QW; nondegenerate differential transmission; nondegenerate pumping; opposite circular polarization; optical properties; pump-probe delay; resonantly excited semiconductors; semiconductor quantum wells; time dependence; unbound electrons; unbound holes; Absorption; Charge carrier processes; Delay effects; Electron optics; Excitons; Optical pumping; Photonic band gap; Polarization; Probes; Resonance;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-663-X
DOI :
10.1109/QELS.2001.962072
