Selective-area deposition of diamond films by combustion activation CVD

This paper was a remarkable point of the new synthesis method that was combustion activation. The synthesized diamond was developed for electronic devices. So it was necessary to determine the area of pattern form of synthesized diamond films. And study on selective deposition of diamond films was presented for leading to develop diamond electronic devices. Surface preparation of silicon substrate that effects to the diamond nucleation, was varied the different conditions. The important parameters of fundamental circuit design were studied by designing patterns of diamond films. For the pattern fabrication, fabrication techniques are used differently such as silicon-dioxide mask technique or Mirror-polished technique in order to protect diamond films generation. The diamond films were analyzed by several techniques. Scanning Electron Microscopy (SEM) was analyzed diamond films growth, grain size and film thickness. Seebeck effect was analyzed type of carrier charge. Raman spectroscopy was analyzed carbon bonding (sp² or sp³). The properties of diamond films were studied on the high temperature operation. From the experiments were found that the best method for fabricating diamond films patterns are using silicon-dioxide mask technique compared with using mirror-polished Si for synthesized diamond films protection.