DocumentCode :
182297
Title :
Keynote 1: Is GaN a Game Changing Device ?
Author :
Lee, Fred C.
Author_Institution :
University of Virginia Technic
fYear :
2014
fDate :
21-24 Sept. 2014
Firstpage :
8
Lastpage :
14
Abstract :
Gallium Nitride devices are gathering momentum, with a number of recent market introductions for such applications as point of load converters (POL), off-line switching power supplies, battery chargers and motor drives. GaN devices have a much lower gate charge and lower output capacitance and, therefore, are capable of operating at a switching frequency 10 times of that of the silicon MOSFET. This might significantly impact the power density, form factor and even the current design and manufacturing practice.
Keywords :
Companies; Educational institutions; Engines; Gallium nitride; Industries; Power electronics; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Motion Control Conference and Exposition (PEMC), 2014 16th International
Conference_Location :
Antalya, Turkey
Type :
conf
DOI :
10.1109/EPEPEMC.2014.6980498
Filename :
6980498
Link To Document :
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