Title :
Ultrasmall memories based on electron transfer reactions
Author :
Beratan, David N. ; Hopfield, J.J. ; Onuchic, José Nelson
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Summary form only given. An electronic shift register memory at the molecular level is described. The memory elements are based on a chain of electron transfer molecules, and the information is shifted by photoinduced electron transfer reactions. This device integrates designed electronic molecules onto a very-large-scale integrated (silicon microelectronic) substrate, providing an example of a molecular electronic device
Keywords :
digital storage; molecular electronics; shift registers; VLSI substrate; chain; electron transfer molecules; electron transfer reactions; electronic molecules; electronic shift register memory; molecular level; photoinduced electron transfer reactions; ultrasmall memories; Biomedical electrodes; Chemical elements; Chemical technology; Chemistry; Clocks; Electrons; Laboratories; Propulsion; Shift registers; Very large scale integration;
Conference_Titel :
Engineering in Medicine and Biology Society, 1989. Images of the Twenty-First Century., Proceedings of the Annual International Conference of the IEEE Engineering in
Conference_Location :
Seattle, WA
DOI :
10.1109/IEMBS.1989.96217
