Title :
Simulation of charge cloud evolution in silicon drift detectors
Author :
Segal, J. ; Plummer, J. ; Kenney, C.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
The spread of the signal during the drift period before collection is a critical parameter for silicon drift detector operation. In this work, simulations have been used to gain an understanding of the charge cloud evolution. Diffusion, Coulomb repulsion within the charge cloud, and variations in the drift field were all found to influence the signal spread. Fluctuations in dopant concentration were found to dramatically influence the drift field
Keywords :
silicon radiation detectors; Coulomb repulsion; Si; Si drift detectors; charge cloud evolution; diffusion; dopant concentration; drift field; drift period; signal spread; Anodes; Clouds; Electrons; Fluctuations; Medical simulation; Physics; Radiation detectors; Silicon; Timing; Voltage;
Conference_Titel :
Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3534-1
DOI :
10.1109/NSSMIC.1996.591061
