Title :
Simultaneous influence of disorder and phonon scattering on coherent and incoherent quantum well secondary emission
Author :
Thranhardt ; Kuckenburg, S. ; Knorr, Andreas ; Thomas, Paul ; Koch, S.W.
Author_Institution :
Opt. Sci. Center, Arizona Univ., Tucson, AZ, USA
Abstract :
Summary form only given. Quantum well secondary emission (SE) is caused by the radiative decay of excitonic polarization that was scattered at least once after optical excitation. Disorder scattering leads to coherent SE displaying a speckle pattern whereas phonon scattering and Coulombic interaction result in incoherent emission. Presently, most calculations of SE only address a single scattering mechanism. We present a microscopic theory including both phonon and disorder scattering which are the dominant scattering mechanism in the low density regime and consistently include all quantities up to the level of exciton densities. To demonstrate the main features, we show in the following some model calculations for a GaAs/AlGaAs structure.
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; phonons; secondary emission; semiconductor device models; semiconductor quantum wells; Coulombic interaction; GaAs-AlGaAs; GaAs/AlGaAs structure; coherent SE; disorder scattering; exciton densities; excitonic polarization; incoherent emission; low density regime; microscopic theory; model calculations; optical excitation; phonon scattering; quantum well secondary emission; radiative decay; single scattering mechanism; speckle pattern; Adaptive optics; Excitons; Gallium arsenide; Microscopy; Optical polarization; Optical scattering; Particle scattering; Phonons; Speckle; Stimulated emission;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2001. QELS '01. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-663-X
DOI :
10.1109/QELS.2001.962230