Title :
Efficiency improvement of Doherty power amplifiers using supply switching and gate bias modulation
Author :
Modi, Sankalp S. ; Yanduru, Naveen ; Balsara, Poras
Author_Institution :
Univ. of Texas at Dallas, Dallas, TX, USA
Abstract :
A new low cost efficiency improvement technique is proposed for Doherty power amplifiers (PA), which combines supply switching with typical load modulation. In addition, the technique employs gate bias modulation to provide gain and maximize efficiency. The proposed technique was investigated with a commercial prototype GaN PA. Measurement and simulation results for a 5 MHz LTE signal showed that the proposed technique significantly improved the average power-added efficiency (PAE) of Doherty PA to ~55 %.
Keywords :
III-V semiconductors; Long Term Evolution; gallium compounds; radiofrequency power amplifiers; wide band gap semiconductors; Doherty power amplifier; GaN; LTE signal; PA; PAE; frequency 5 MHz; gate bias modulation; load modulation; power-added efficiency; supply switching; Gain; Logic gates; Modulation; Power amplifiers; Power generation; Switches; Switching circuits;
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2014 IEEE 15th Annual
Conference_Location :
Tampa, FL
DOI :
10.1109/WAMICON.2014.6857774
