Title :
Mapping high pressure Bridgman Cd0.8Zn0.2Te from Russia
Author :
Schieber, M. ; Hermon, H. ; James, R.B. ; Lund, J. ; Antolak, A. ; Morse, D. ; Kolesnikov, N.N. ; Ivanov, Yu.N. ; Goorsky, M.S. ; Van Scyoc, J.M. ; Yoon, H. ; Toney, J. ; Schlesinger, T.E. ; Doty, F.P. ; Cozzatti, J.P.D.
Author_Institution :
Sandia Nat. Labs., Livermore, CA, USA
Abstract :
Mapping of single crystals of Cd(1-x/)Znsub x/Te (x=0.2) grown in Russia by the high pressure vertical Bridgman method, (HPVBM) under argon pressure of 2 to 10 MPa was performed using X-ray fluorescence (XRF), X-ray diffraction (XRD), photoluminescence (PL) and leakage current uniformity. The crystals were more uniform in Zn composition than US produced material but had a poorer crystallinity and in the best case could only count nuclear radiation. Differences in the material properties between Russian and US material will be described
Keywords :
II-VI semiconductors; X-ray diffraction; X-ray fluorescence analysis; cadmium compounds; crystal growth from melt; photoluminescence; semiconductor counters; zinc compounds; 2 to 10 MPa; Cd0.8Zn0.2Te; Russia; X-ray diffraction; X-ray fluorescence; high pressure vertical Bridgman method; leakage current uniformity; photoluminescence; semiconductor detectors; single crystals mapping; Argon; Crystalline materials; Crystallization; Crystals; Fluorescence; Photoluminescence; Tellurium; X-ray diffraction; X-ray scattering; Zinc;
Conference_Titel :
Nuclear Science Symposium, 1996. Conference Record., 1996 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3534-1
DOI :
10.1109/NSSMIC.1996.591082
