DocumentCode :
1828700
Title :
Yield and productivity improvements through use of advanced dual plasma source for TSV reveal & wafer dicing applications
Author :
Barnett, Richard ; Thomas, Dave ; Griffiths, Hefin
fYear :
2011
fDate :
7-9 Dec. 2011
Firstpage :
585
Lastpage :
589
Abstract :
In summary, it is clear that the deep Si etch requirements for MEMS, through- silicon vias (TSV) , via reveal and dicing have significant common ground and the experience established in any of the fields becomes useful across the others. The Pegasus Rapier has provided many of the benefits needed by users of this technology, with their inception being generated by the relative needs of their complementary markets.
Keywords :
elemental semiconductors; etching; micromechanical devices; silicon; three-dimensional integrated circuits; wafer level packaging; MEMS; TSV reveal; deep Si etch requirement; dual plasma source; productivity improvement; through-silicon vias; wafer dicing application; yield improvement; Glass; ISO standards; Plasma sheaths; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference (EPTC), 2011 IEEE 13th
Conference_Location :
Singapore
Print_ISBN :
978-1-4577-1983-7
Electronic_ISBN :
978-1-4577-1981-3
Type :
conf
DOI :
10.1109/EPTC.2011.6184488
Filename :
6184488
Link To Document :
بازگشت