Title :
VHDL-AMS design of a MOST model including deep submicron and thermal-electronic effects
Author :
Lallement, Christophe ; Pêcheux, François ; Hervé, Yannick
Author_Institution :
ERM-PHASE/ENSPS, Ilkirch, France
Abstract :
The paper presents an application of the VHDL-AMS formalism to the model of a n-MOS transistor named EKV. Our model takes into account several new features specific to deep submicron technology (parasitic resistors and overlap capacitors induced by LDD), and thermal-electronic interactions. We then give some examples of application of this innovative EKV MOS model (inverter, thermal-opto-electronic coupling)
Keywords :
CMOS integrated circuits; MOSFET; hardware description languages; integrated circuit design; micro-optics; semiconductor device models; CMOS inverter; EKV; LDD; MOEMS; MOST model; VHDL-AMS design; deep submicron effects; n-MOS transistor; overlap capacitors; parasitic resistors; submicron technology; thermal effects; CMOS technology; Capacitance; Circuit simulation; Inverters; MOS capacitors; MOSFET circuits; Resistors; Semiconductor device modeling; Temperature; Threshold voltage;
Conference_Titel :
Behavioral Modeling and Simulation, 2001. BMAS 2001. Proceedings of the Fifth IEEE International Workshop on
Conference_Location :
Santa Rosa, CA
Print_ISBN :
0-7803-7291-3
DOI :
10.1109/BMAS.2001.962503
