A 2.45GHz fully-differential CMOS image-reject mixer for Bluetooth application

Author

Khannur, P.B. ; Koh Soo Ling

Author_Institution

Inst. of Microelectron. (IME), Singapore, Singapore

Volume

1

fYear

2002

fDate

2-7 June 2002

Firstpage

549

Abstract

The design of a 2.45GHz image-reject mixer (IRM) for Bluetooth application using low-cost 0.35um, double-poly four-metal standard CMOS process with the metal-insulator-metal (MIM) capacitor option is described. The proposed design uses Hartley architecture with temperature compensation to significantly reduce the gain variation with temperature (-40/spl deg/C to +85/spl deg/C). In-house extracted models were used for active and passive components to achieve image rejection ratio (IRR) better than 45dB, input referred third-order intercept point (IIP3) better than -7dBm, voltage conversion gain better than 20dB and noise figure less than 20dB under all process, temperature, and voltage supply conditions. The intermediate frequency (IF) is 2MHz. The circuit operates from a 3V/spl plusmn/10% supply and draws 10.4mA.

Keywords

CMOS integrated circuits; UHF integrated circuits; UHF mixers; compensation; integrated circuit noise; radio receivers; -40 to 85 C; 0.35 micron; 10.4 mA; 2.45 GHz; 20 dB; 3 V; Bluetooth receiver; Hartley architecture; MIM capacitor; fully-differential CMOS image-reject mixer; image rejection ratio; input referred third-order intercept point; intermediate frequency; noise figure; temperature compensation; voltage conversion gain; Bluetooth; CMOS process; Frequency; Image converters; MIM capacitors; Metal-insulator structures; Noise figure; Semiconductor device modeling; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011679

Filename

1011679