A novel wholly aromatic polyether as an interlayer dielectric material

Author

Tanabe, Tsuneaki ; Kita, Kohei ; Maruyama, Mutsuhiro ; Sanechika, Kenichi ; Kuroki, Masakatsu ; Tamura, Nobuchika

Author_Institution

Central Res. Labs., Asahi Chem. Ind. Co. Ltd., Fuji City, Japan

fYear

1998

fDate

1-3 Jun 1998

Firstpage

220

Lastpage

222

Abstract

A new amorphous, wholly aromatic polyether was synthesized and evaluated as the spin on type low-k material for ULSI multilevel interconnects. A new polymerization process was developed to reduce the concentration of ionic impurities. This material showed a dielectric constant of 2.7-2.8, excellent thermal stability and excellent adhesion to various substrates. The synthesis and the characterization of this polyether are reported in detail. The thermal crosslinking behaviour using a crosslinking agent is also discussed

Keywords

ULSI; adhesion; dielectric thin films; impurity distribution; integrated circuit interconnections; integrated circuit metallisation; permittivity; polymer films; polymerisation; spin coating; thermal stability; ULSI multilevel interconnects; adhesion; crosslinking agent; dielectric constant; interlayer dielectric material; ionic impurity concentration; polyether characterization; polyether synthesis; polymerization process; spin on type low-k material; thermal crosslinking; thermal stability; wholly aromatic polyether; Adhesives; Coatings; Dielectric constant; Dielectric materials; Impurities; Polymers; Purification; Temperature; Thermal stability; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704904

Filename

704904