DocumentCode :
1833594
Title :
"GaAs RF Wafer Qualification using RF Probes"
Author :
Mitchell, Bill H. ; Davis, WAlan ; Boggan, Garry
Author_Institution :
Texas Instruments Inc., Dallas, Tx.
Volume :
12
fYear :
1987
fDate :
Dec. 1987
Firstpage :
41
Lastpage :
53
Abstract :
Processing of Gallium Arsenide MMIC´s is expensive due in part to the time required to RF-qualify wafers. Manufacturers who intend to compete in this relatively new market must reduce device costs. To reduce a MMIC´s cost a major emphasis should be on early detection and discontinuation of wafers which will not yield devices meeting the MMIC´s expected RF performance. On-wafer RF qualification can be established as a technique to achieve this goal.
Keywords :
Circuit testing; Coplanar transmission lines; Costs; FETs; Gallium arsenide; MESFETs; MMICs; Probes; Qualifications; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ARFTG Conference Digest-Winter, 30th
Conference_Location :
Dallas, TX, USA
Print_ISBN :
0-7803-5686-1
Type :
conf
DOI :
10.1109/ARFTG.1987.323882
Filename :
4119442
Link To Document :
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