Title :
Accurate prediction of PHEMT intermodulation distortion using the nonlinear discrete convolution model
Author :
Costantini, A. ; Paganelli, R.P. ; Traverso, P.A. ; Argento, D. ; Favre, G. ; Pagani, M. ; Santarelli, Alberto ; Vannini, G. ; Filicori, F.
Author_Institution :
Dept. of Eng., Ferrara Univ., Italy
Abstract :
A general-purpose, technology-independent behavioral model is adopted for the intermodulation performance prediction of PHEMT devices. The model can be easily identified since its nonlinear functions are directly related to conventional DC and small-signal differential parameter measurements. Experimental results which confirm the model accuracy at high operating frequencies are provided in the paper.
Keywords :
high electron mobility transistors; intermodulation distortion; microwave field effect transistors; semiconductor device measurement; semiconductor device models; PHEMT; intermodulation distortion; model accuracy; nonlinear discrete convolution model; nonlinear functions; operating frequencies; small-signal differential parameter measurements; technology-independent behavioral model; Convolution; Distortion measurement; Electron devices; Frequency; Intermodulation distortion; Numerical simulation; PHEMTs; Power system modeling; Predictive models; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1011765
