Title :
Surface structure analysis and measurement of thick oxide self-aligned silicon avalanche electron emission device
Author_Institution :
Inst. of Manuf. Process. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
The surface topology of silicon self-aligned avalanche electron emission device, which is based on LOCOS technology, has been studied. The “bird beak” structure of LOCOS offers a smooth surface with gentle slope and without obvious steps. DEKTAK 3 surface analyser and Tunnelscope 2400 STM are used to determine and analyse device surface structure. The testing results are agreed with simulation results and device I-V characteristics shows a better result than that of the tranditional structure of the silicon avalanche cathode (SAC)
Keywords :
avalanche breakdown; electron field emission; elemental semiconductors; isolation technology; scanning tunnelling microscopy; silicon; surface structure; vacuum microelectronics; DEKTAK 3 surface analyser; LOCOS technology; Si; Tunnelscope 2400 STM; avalanche electron emission device; bird beak structure; device I-V characteristics; measurement; self-aligned device; surface structure analysis; surface topology; thick oxide; Cathodes; Diodes; Electron emission; Fabrication; Microelectronics; Silicon; Surface structures; Thickness measurement; Topology; Voltage;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503326
