Transient-to-digital converter for protection design in CMOS integrated circuits against electrical fast transient

Author

Yen, Cheng-Cheng ; Ker, Ming-Dou ; Liao, Chi-Sheng ; Chen, Tung-Yang ; Tsai, Chih-Chung

Author_Institution

Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

fYear

2009

fDate

17-21 Aug. 2009

Firstpage

41

Lastpage

44

Abstract

An on-chip transient-to-digital converter for protection design against electrical fast transient (EFT) is proposed. The proposed transient-to-digital converter is designed to detect fast electrical transients under EFT tests. The output digital codes can correspond to different EFT voltages during the EFT-induced transient disturbances. The experimental results in a 0.18-mum CMOS integrated circuit (IC) with 3.3-V devices have confirmed the detection function and digital output codes.

Keywords

CMOS integrated circuits; analogue-digital conversion; CMOS integrated circuit; EFT testing; digital codes; electrical fast transient; protection design; size 0.18 mum; transient-to-digital converter design; voltage 3.3 V; CMOS integrated circuits; Capacitors; Circuit testing; IEC standards; Integrated circuit noise; MOS devices; Microelectronics; Protection; Pulse measurements; Voltage; converter; electrical fast transient (EFT) test; transient detection circuit;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility, 2009. EMC 2009. IEEE International Symposium on

Conference_Location

Austin, TX

Print_ISBN

978-1-4244-4266-9

Electronic_ISBN

978-1-4244-4058-0

Type

conf

DOI

10.1109/ISEMC.2009.5284683

Filename

5284683