DocumentCode :
1835021
Title :
A 1.5 v High Swing Ultra-Low-Power Two Stage CMOS OP-AMP in 0.18 µm Technology
Author :
Kargaran, Ehsan ; Khosrowjerdi, Hojat ; Ghaffarzadegan, Karim
Author_Institution :
Sadjad Inst. for Higher Educ., Mashhad, Iran
Volume :
1
fYear :
2010
fDate :
1-3 Aug. 2010
Abstract :
A High Swing Ultra-Low-Power Two Stage CMOS OP-AMP in 0.18 μm Technology with 1.5v supply, is presented.Topology selection and theoretical analysis of the design are discussed. Cascode technique has been used to increase the dc gain. The unity-gain bandwidth is also enhanced using a gain-stage in the Miller capacitor feedback path. The proposed opamp provides 236 MHz unity-gain bandwidth, 81.3 degree phase margin and a peak to peak output swing 1.26 v. The circuit has 92.5 dB gain and slew rate is 16.75 v/μs . The power dissipation of the designed only is 50 μw. The designed system demonstrates relatively suitable response in different temperature.
Keywords :
CMOS analogue integrated circuits; network topology; operational amplifiers; Miller capacitor feedback path; cascode technique; frequency 236 MHz; gain 92.5 dB; high swing ultra-low-power two stage CMOS op-amp; power 50 muW; size 0.18 mum; topology selection; voltage 1.26 V; voltage 1.5 V; Topology; Cascode; High Swing; Low-Voltage; Two Stage CMOS OP-AMP; Ultra-Low-Power;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mechanical and Electronics Engineering (ICMEE), 2010 2nd International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-7479-0
Electronic_ISBN :
978-1-4244-7481-3
Type :
conf
DOI :
10.1109/ICMEE.2010.5558594
Filename :
5558594
Link To Document :
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