Title :
The study of the convex corner compensation in anisotropic wet etching of (100) Si in aqueous KOH
Author :
Zhang, Qingxin ; Liu, Litian ; Li, Zhijian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
The method of convex corner compensation with a ⟨100⟩ bar for silicon, presented by G.K. Mayer et al. (1990), has been investigated. The limitations of the method are indicated, and a modified method is proposed
Keywords :
compensation; elemental semiconductors; etching; silicon; (100) Si; KOH; Si; anisotropic wet etching; aqueous KOH; convex corner compensation; Anisotropic magnetoresistance; Joining processes; Silicon; Strips; Wet etching;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503330
