• DocumentCode
    1836131
  • Title

    MeV ion implantation and application

  • Author

    Ji, Chengzhou ; Lu, Wumg ; Li, Guohul

  • Author_Institution
    Inst. of Low Energy Nucl. Phys., Beijing Normal Univ., China
  • fYear
    1995
  • fDate
    24-28 Oct 1995
  • Firstpage
    651
  • Lastpage
    655
  • Abstract
    This paper briefly reviews MeV implantation studies and applications to semiconductors carried out at Beijing Normal University. The reduction of secondary defects formation in silicon and the activation of Si implants in GaAs are emphasized. Selected examples are presented
  • Keywords
    ion implantation; semiconductor doping; GaAs:Si; MeV ion implantation; Si; activation; secondary defects; semiconductors; Annealing; Fabrication; Gallium arsenide; Implants; Insulation; Ion implantation; Isolation technology; Nuclear physics; Silicon; Solid state circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-3062-5
  • Type

    conf

  • DOI
    10.1109/ICSICT.1995.503380
  • Filename
    503380
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1836131