Title :
A thermal field oxidation process for ionizing radiation hardness
Author :
Zhao, Yuanfu ; Hu, Yuhong ; Yan, RONGLIANG ; Zhang, GUOQIANG ; Ren, DIYUAN
Author_Institution :
Xi´´an Microelectron. Res. Inst., Shaanxi, China
Abstract :
A thermal field oxidation process for ionizing radiation hardness has been described. It is shown that the failure threshold of 54HC04, in which the hardened thermal field process has been applied, is excess to 1×106rad(Si)
Keywords :
CMOS integrated circuits; integrated circuit technology; oxidation; radiation hardening (electronics); 1E6 rad; 54HC04; CMOS integrated circuit; failure threshold; ionizing radiation hardness; thermal field oxidation; CMOS integrated circuits; Electric variables; Integrated circuit layout; Ionizing radiation; Leakage current; MOS devices; Microelectronics; Oxidation; Physics; Radiation hardening;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3062-5
DOI :
10.1109/ICSICT.1995.503384
