60μW SMR BAW oscillator designed in 65nm CMOS technology

Author

Dossou, S. ; Abele, N. ; Cesar, E. ; Ancey, P. ; Carpentier, J.F. ; Vincent, P. ; Fournier, J.M.

Author_Institution

STMicroelectronics, Crolles

fYear

2008

fDate

18-21 May 2008

Firstpage

1456

Lastpage

1459

Abstract

This paper presents the simulation results of a BAW- based low power oscillator. The oscillator was designed using high-Q solidly mounted bulk acoustic wave resonators (SMR BAW) exhibiting quality factor around 2200. The oscillator is simulated using RF transistors of the CMOS 65 nm process from STMicroelectronics. The oscillator was optimized for low power purpose and consumes 50 muA from a 1.2 V source with phase noise performance of -124 dBc/Hz at 100 KHz offset. The impact of the bias current on phase noise, output voltage and oscillation frequency was also studied.

Keywords

CMOS integrated circuits; Q-factor; acoustic resonators; bulk acoustic wave devices; crystal oscillators; integrated circuit design; low-power electronics; nanoelectronics; phase noise; CMOS technology; RF transistor; bias current; bulk acoustic wave resonators; current 50 muA; high-Q solidly mounted BAW oscillator design; low-power oscillator; phase noise performance; power 60 muW; quality factor; size 65 nm; voltage 1.2 V; Acoustic measurements; CMOS technology; Circuits; Electrodes; Oscillators; Phase noise; Q factor; Radio frequency; Resonance; Wireless sensor networks;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on

Conference_Location

Seattle, WA

Print_ISBN

978-1-4244-1683-7

Electronic_ISBN

978-1-4244-1684-4

Type

conf

DOI

10.1109/ISCAS.2008.4541703

Filename

4541703