The design of SiGe HBT LNA for IMT-2000 mobile application

Author

Jeiyoung Lee ; Geunho Lee ; Guofu Niu ; Cressler, J.D. ; Kim, J.H. ; Lee, J.C. ; Lee, B. ; Kim, N.Y.

Author_Institution

RFIC Center, Kwangwoon Univ., Seoul, South Korea

Volume

2

fYear

2002

fDate

2-7 June 2002

Firstpage

1261

Abstract

This paper describes a SiGe HBT low noise amplifier (LNA) design for IMT-2000 mobile applications. The emitter degeneration technique for stability and the out-of-band-termination technique for improvement of IP3 (third order intercept point) are applied to SiGe HBT LNA design. This SiGe HBT LNA yields a noise figure of 1.2 dB, 16 dB gain, an input return loss of 11 dB, and an output return loss of 14.3 dB over the desired frequency range (2.11-2.17 GHz). When the RF input power is -23 dBm, the input third order intercept point (IIP3) of 8.415 dBm and the output third order intercept point (OIP3) of 24.415 dBm are achieved.

Keywords

Ge-Si alloys; UHF amplifiers; heterojunction bipolar transistors; mobile radio; semiconductor materials; 1.2 dB; 11 dB; 14.3 dB; 16 dB; 2.11 to 2.17 GHz; IMT-2000 mobile communication; RF input power; SiGe; SiGe HBT low-noise amplifier; emitter degeneration; gain; input return loss; input third-order intercept point; noise figure; out-of-band termination; output return loss; output third-order intercept point; stability; Energy consumption; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Noise figure; Paper technology; Power system modeling; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1011891

Filename

1011891