Title :
Highly linear SiGe BiCMOS LNA and mixer for cellular CDMA/AMPS applications
Author :
Aparin, V. ; Zeisel, E. ; Gazzerro, P.
Author_Institution :
QUALCOMM Inc., San Diego, CA, USA
Abstract :
BiCMOS LNA and mixer designed for cellular CDMA/AMPS applications are described. The circuits exhibit very high linearity thanks to low-impedance low-frequency input terminations. The LNA achieves +12.2 dBm IIP3, 16.3 dB gain and 1.5 dB NF with 7.7 mA current in the high-gain high-linearity mode. The mixer achieves +14.7 dBm IIP3, 10.9 dB conversion power gain and 6.7 dB SSB NF with 8.4 mA current in the CDMA mode.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; UHF mixers; cellular radio; code division multiple access; phase noise; radio receivers; thermal noise; 1.5 dB; 10.9 dB; 16.3 dB; 6.7 dB; 7.7 mA; 8.4 mA; BiCMOS mixer; CDMA phones; RF-to-baseband receiver; SiGe; active mixers; cellular CDMA/AMPS applications; high-gain high-linearity mode; highly linear BiCMOS LNA; low-impedance low-frequency input terminations; single-balanced topology; thermal noise; Base stations; BiCMOS integrated circuits; Degradation; Germanium silicon alloys; Jamming; Linearity; Multiaccess communication; Noise measurement; Phase noise; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1011939
