Title :
A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application
Author :
Numata, K. ; Takahashi, Y. ; Maeda, T. ; Hida, H.
Author_Institution :
Photonic & Wireless Device Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
We have developed a high-power-handling and low-voltage-controlled GaAs single-pole dual-throw (SPDT) antenna switch for GSM application. The switch circuit configuration has a capacitor at the antenna terminal and two resistors between the transmitter (Tx) and receiver (Rx) terminals and the control terminals. This circuit enables the DC voltages of the Tx terminal and the Rx terminal to be separated from each other, resulting in a high-power-handling operation at a lower control voltage than that for the conventional switch. The developed SPDT switch demonstrated a handling power of 37.5 dBm and an insertion loss of 0.37 dB with a control voltage of +2.4/0 V.
Keywords :
III-V semiconductors; JFET integrated circuits; antenna accessories; cellular radio; field effect MMIC; gallium arsenide; microwave switches; switching circuits; 0.37 dB; 2.4 V; GSM application; GaAs; GaAs HJFET process; GaAs single-pole dual-throw antenna switch; SPDT switch; antenna terminal; handling power; harmonics characteristics; high-power-handling operation; insertion loss; low-voltage-controlled switch; power transfer characteristics; receiver terminal; switch circuit configuration; transmitter terminal; GSM; Gallium arsenide; Receiving antennas; Resistors; Switched capacitor circuits; Switches; Switching circuits; Transmitters; Transmitting antennas; Voltage control;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1011942
