DocumentCode :
1838727
Title :
CMOS image sensor readout employing in-pixel transistor current sensing
Author :
Ignjatovic, Zeljko ; Zhang, Yang ; Bocko, Mark F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Rochester, Rochester, NY
fYear :
2008
fDate :
18-21 May 2008
Firstpage :
1858
Lastpage :
1861
Abstract :
We propose an analog CMOS image sensor with 10X faster readout settling time than standard active pixel sensor (APS) designs. The pixel in the proposed design is a standard APS source follower configuration thus retaining high fill factor. Negative feedback is applied to the readout of the pixel from a column shared circuit to increase its current driving capabilities and thereby reduce the settling time between correlated double sampling (CDS) samples, which significantly reduces the 1/f noise contributed by the in-pixel source follower transistor. In addition, we describe an improved active reset utilizing the current sensing method. We present analysis and simulations of the proposed current sensing active pixel (CSAP) sensor design in a standard 0.35 um CMOS process operating from a 3.3 V power supply.
Keywords :
CMOS image sensors; transistors; CMOS image sensor readout; analog CMOS image sensor; current sensing active pixel; in-pixel source follower transistor; in-pixel transistor current sensing; standard active pixel sensor; voltage 3.3 V; Analytical models; CMOS image sensors; CMOS process; Circuit noise; Feedback circuits; Negative feedback; Noise reduction; Pixel; Power supplies; Sampling methods;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2008. ISCAS 2008. IEEE International Symposium on
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-1683-7
Electronic_ISBN :
978-1-4244-1684-4
Type :
conf
DOI :
10.1109/ISCAS.2008.4541803
Filename :
4541803
Link To Document :
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