Title :
Low-frequency noise figures-of-merit in RF SiGe HBT technology
Author :
Jin Tang ; Guofu Niu ; Zhenrong Jin ; Cressler, J.D. ; Shiming Zhang ; Joseph, A.J. ; Harame, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
Abstract :
We present the first systematic experimental and modeling results of corner frequency (f/sub C/) and the corner frequency to cutoff frequency ratio (f/sub C//f/sub T/) for SiGe HBTs in a commercial SiGe RF technology. The f/sub C//f/sub T/ ratio is examined as a function of biasing current for SiGe HBTs featuring multiple collector doping profiles (breakdown voltages) and multiple SiGe profiles.
Keywords :
Ge-Si alloys; doping profiles; heterojunction bipolar transistors; semiconductor device breakdown; semiconductor device models; semiconductor device noise; semiconductor materials; RF SiGe HBT technology; SiGe; biasing current; breakdown voltage; corner frequency; cutoff frequency; figure-of-merit; low-frequency noise; multiple SiGe profile; multiple collector doping profile; Cutoff frequency; Doping profiles; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise figure; Noise measurement; Radio frequency; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7246-8
DOI :
10.1109/RFIC.2002.1012061
