Characterization of the Cu/barrier metal interface for copper interconnects

Author

Nogami, Takeshi ; Romero, Jeremias ; Dubin, Valery ; Brown, Dirk ; Adem, Ercan

Author_Institution

Adv. Micro Devices Inc., Sunnyvale, CA, USA

fYear

1998

fDate

1-3 Jun 1998

Firstpage

298

Lastpage

300

Abstract

The Cu/barrier metal interface must be controlled to suppress interfacial electromigration of copper. Wetting and agglomeration of thin copper on several kinds of TiN films were analyzed by using AFM. Wetting/agglomeration differed among copper on different TiN layers. Also, the film texture of thicker copper films formed on these TiN films was analyzed by XRD. As interface wetting is better, the copper film has a higher texture, indicating that a better Cu/barrier interface and a better film texture occur simultaneously on a copper interconnect

Keywords

X-ray diffraction; atomic force microscopy; chemical interdiffusion; copper; diffusion barriers; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; interface structure; surface texture; titanium compounds; wetting; AFM; Cu film texture; Cu interfacial electromigration; Cu-TiN; Cu/barrier interface; Cu/barrier metal interface; TiN films; XRD; agglomeration; copper film texture; copper film thickness; copper interconnects; film texture; interface wetting; thin copper films; wetting; Annealing; Argon; Atomic force microscopy; Copper; Electromigration; Postal services; Sputtering; Tin; Titanium; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 1998. Proceedings of the IEEE 1998 International

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-4285-2

Type

conf

DOI

10.1109/IITC.1998.704929

Filename

704929