DocumentCode
1839049
Title
Low cost and high reliability CMOS technologies, by "retro process sequence"
Author
Sekikawa, Nobuyuki ; Ando, Wataru ; Momen, Masaaki ; Hirata, Koichi
Author_Institution
Sanyo Electr. Co. Ltd., Gunma, Japan
fYear
2001
fDate
2001
Firstpage
211
Lastpage
214
Abstract
Describes a novel low-cost CMOS process, which reduces the number of process modules by reversing the process sequence before gate electrode formation, "retro process sequence". The damage of gate oxide from ion implantation and heat treatment are investigated by TDDB and burn-in. The results suggest this novel process can be applied to LSIs. It is possible to cut down the production cost of wafer before gate electrode formation by 40%
Keywords
CMOS integrated circuits; heat treatment; integrated circuit economics; integrated circuit reliability; ion implantation; large scale integration; process control; semiconductor device breakdown; CMOS technologies; LSIs; TDDB; burn-in; gate electrode formation; gate oxide damage; heat treatment; ion implantation; process modules; production cost; retro process sequence; CMOS process; CMOS technology; Costs; Degradation; Electrodes; Heat treatment; Implants; Ion implantation; Oxidation; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing Symposium, 2001 IEEE International
Conference_Location
San Jose, CA
Print_ISBN
0-7803-6731-6
Type
conf
DOI
10.1109/ISSM.2001.962951
Filename
962951
Link To Document