DocumentCode :
1839285
Title :
Spiral inductor performance in deep-submicron bulk-CMOS with copper interconnects
Author :
Kuhn, W.B. ; Orsborn, A.W. ; Peterson, M.C. ; Kythakyapuzha, S.R. ; Hussein, Ahmed I. ; Jun Zhang ; Jianming Li ; Shumaker, E.A. ; Nair, N.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Kansas State Univ., Manhattan, KS, USA
fYear :
2002
fDate :
3-4 June 2002
Firstpage :
385
Lastpage :
388
Abstract :
This paper reviews design considerations for spiral inductors in bulk CMOS and reports investigations carried out in a commercial 0.18 /spl mu/m process using 6-layer copper metallization. Quality factors of approximately 8 are measured for 10 nH spirals operating between 1 and 2 GHz. Comparisons of Q and self-resonant frequency are provided for a variety of construction variables including with/without a patterned ground shield, metal-6 only versus stacking layers 3 thru 6, dense versus sparse vias, wide versus narrow traces, and with/without metal-fill.
Keywords :
CMOS integrated circuits; Q-factor; eddy currents; field effect MMIC; inductors; integrated circuit interconnections; integrated circuit metallisation; 1 to 2 GHz; copper interconnects; deep-submicron bulk CMOS; design considerations; inductance; metal-fill; narrow traces; optimization; patterned ground shield; quality factors; self-resonant frequency; spiral inductors; wide traces; CMOS process; Copper; Eddy currents; Frequency; Inductance; Inductors; Modems; Q factor; Spirals; Stacking;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2002 IEEE
Conference_Location :
Seattle, WA, USA
ISSN :
1529-2517
Print_ISBN :
0-7803-7246-8
Type :
conf
DOI :
10.1109/RFIC.2002.1012073
Filename :
1012073
Link To Document :
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