• DocumentCode
    18396
  • Title

    Process and Circuit Optimization for Power Reduction Using DDC Transistors

  • Author

    Kidd, David

  • Author_Institution
    SuVolta, Los Gatos, CA, USA
  • Volume
    34
  • Issue
    2
  • fYear
    2014
  • fDate
    Mar.-Apr. 2014
  • Firstpage
    54
  • Lastpage
    62
  • Abstract
    The Deeply Depleted Channel (DDC) transistor architecture offers 2 to 3 times improvement in body coefficient and 60 percent improvement in local mismatch in 55-nm technology, extending design techniques such as body biasing with voltage scaling to more recent technology nodes. This article presents a body bias architecture for adaptive correction of manufacturing variation, with less than 0.5 percent area penalty for the bias generators. Process monitors with digital readout independently detect p-channel MOS (PMOS) and n-channel MOS (NMOS) process windows. Fujitsu Semiconductor Limited offers DDC technology in its CS250S 55-nm production qualified process, and is currently in production with its first DDC product, a seventh-generation Milbeaut digital-camera processor that performs at twice the performance of the previous generation with 30 percent less power.
  • Keywords
    MOSFET; digital readout; CS250S production qualified process; DDC technology; DDC transistor architecture; Fujitsu Semiconductor Limited; NMOS process window detection; PMOS process window detection; adaptive correction; area penalty; bias generators; body bias architecture; body biasing; body coefficient; circuit optimization; deeply-depleted channel transistor architecture; design technique; digital readout; manufacturing variation; n-channel MOS process window detection; p-channel MOS process window detection; power reduction; process monitors; seventh-generation Milbeaut digital-camera processor; size 55 nm; technology nodes; voltage scaling; Computer architecture; Logic gates; Manufacturing; Performance evaluation; Program processors; Random access memory; System-on-chip; Threshold voltage; Transistors; built-in tests; low-power design;
  • fLanguage
    English
  • Journal_Title
    Micro, IEEE
  • Publisher
    ieee
  • ISSN
    0272-1732
  • Type

    jour

  • DOI
    10.1109/MM.2014.8
  • Filename
    6756700