Pre-metal clean optimization for cluster defect prevention

Author

Ku, S.Y. ; Lo, T.W. ; Shih, Y.J. ; Shi, C.J. ; Wang, C.H. ; Yu, Y.J.

Author_Institution

Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

fYear

2001

fDate

2001

Firstpage

499

Lastpage

501

Abstract

Pre-metal clean is a critical procedure before the metal loop in the salicide process. Surface defects such as the surface native oxide or any other contamination may result in a poor adhesion of Ti/TiN, for example, and hence the poor salicide formation. HF treatment with IPA dry is a widely used methodology for surface defect removal, and results in a clean surface which is water spot free and has less chemical oxide. However, a cluster type defect is an accompaniment of this treatment in the salicide process. The aim of this work is to provide an optimized cleaning procedure at pre-metal clean for mass production

Keywords

adhesion; integrated circuit metallisation; integrated circuit yield; surface cleaning; surface contamination; IC yield; Si; Ti-TiN; ULSI devices; adhesion; cluster defect prevention; mass production; optimized cleaning procedure; pre-metal clean optimization; salicide process; surface contamination; surface defect removal; ultra large scale integration; Adhesives; Chemicals; Hafnium; Mass production; Semiconductor device manufacture; Surface cleaning; Surface contamination; Surface treatment; Tin; Water pollution;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Symposium, 2001 IEEE International

Conference_Location

San Jose, CA

Print_ISBN

0-7803-6731-6

Type

conf

DOI

10.1109/ISSM.2001.963024

Filename

963024