An analysis of source connections in GaN power transistor packages

This paper presents an analysis of different variations to contact the source of GaN power transistors in a package. Two variants relying on bondwires, and three variations using source vias are considered. Based on em simulations, equivalent circuits are determined for the package, which enables detailed analysis of cause and effect in the overall package performance. The focus of the investigation lies on the mutual inductive coupling, that shows to be a dominant effect. It is also shown that positive feedback might be used to partially compensate the undesired source inductance.