Title :
A comparison of W-band monolithic resistive mixer architectures
Author :
Barnes, A.R. ; Munday, P. ; Jennings, R. ; Moore, M.T.
Author_Institution :
Malvern Technol. Centre, QinetiQ, Malvern, UK
Abstract :
Three W-band resistive mixer architectures have been designed and their performance compared and contrasted. The mixers were fabricated using 0.1 /spl mu/m gate length InP HEMT technology for improved conversion loss performance compared to GaAs pHEMT. In particular, a state of art 94 GHz sub-harmonic resistive mixer is reported with 9.5 dB conversion loss when operated with a LO drive level of 2 dBm.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC mixers; field effect MIMIC; indium compounds; millimetre wave mixers; 0.1 micron; 9.5 dB; 94 GHz; InP; InP HEMT technology; LO drive level; W-band monolithic resistive mixer architectures; conversion loss; sub-harmonic resistive mixer; FETs; Frequency; Gallium arsenide; HEMTs; High-resolution imaging; Indium phosphide; MMICs; PHEMTs; Performance loss; Radar imaging;
Conference_Titel :
Microwave Symposium Digest, 2002 IEEE MTT-S International
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-7239-5
DOI :
10.1109/MWSYM.2002.1012227
