Conduction, reverse conduction and switching characteristics of GaN E-HEMT

Author

Sorensen, Charlie ; Fogsgaard, Martin Lindblad ; Christiansen, Michael Noe ; Graungaard, Mads Kjeldal ; Norgaard, Jacob Bitcsh ; Uhrenfeldt, Christian ; Trintis, Ionut

Author_Institution

Dept. of Energy Technol., Aalborg Univ., Aalborg, Denmark

fYear

2015

fDate

22-25 June 2015

Firstpage

1

Lastpage

7

Abstract

In this paper switching and conduction characterization of the GS66508P-E03 650V enhancement mode gallium nitride (GaN) transistor is described. GaN transistors are leading edge technology and as so, their characteristics are less than well documented. The switching characteristics are found using a simulated double pulse test (DPT) whereas the conduction characteristics are measured in a curvetracer. The reverse conduction was found to be similar to the forward conduction with a voltage drop of V_th-V_gs(OFF). To decrease the parasitic impedance some considerations has been taken. These considerations are described and a model of the double pulse test is formulated.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; power semiconductor devices; wide band gap semiconductors; E-HEMT; GaN; double pulse test; enhancement mode gallium nitride transistor; forward conduction; parasitic impedance; reverse conduction; switching characteristics; voltage drop; Current measurement; Gallium nitride; Inductance; Logic gates; Loss measurement; Multichip modules; Transistors; Current-voltage characteristics; DC-AC power converters; Gallium nitride; HEMTs; Loss measurements; Pulse width modulation converters; Switching loss; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics for Distributed Generation Systems (PEDG), 2015 IEEE 6th International Symposium on

Conference_Location

Aachen

Type

conf

DOI

10.1109/PEDG.2015.7223051

Filename

7223051