Microwave noise sources in AlGaAs/GaAs HBTs

Author

Sakalas, P. ; Schroter, M. ; Zampardi, P. ; Zirath, H. ; Welse, R.

Author_Institution

Dresden Univ. of Technol., Germany

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

2117

Abstract

Scattering and noise parameters of AlGaAs/GaAs HBTs from Conexant with 30 and 35% of Al mole content were measured and modeled. De-embedding of the pad parasitics was accurately performed by using a "two step" method and small-signal modeling. Small-signal hybrid /spl Pi/ type model parameters were extracted from "cold" and "hot" HBT measurements. Thermal, hot electron and correlated base and collector current shot noises were included in the noise model, which accounted well for the measured noise parameters. From the resolution of noise sources It was found that minimum in noise figure at 5 GHz stems from the correlation of base and collector shot noise. Al content in the alloy does not influence the high frequency noise properties of the AlGaAs/GaAs HBTs.

Keywords

III-V semiconductors; S-parameters; aluminium compounds; gallium arsenide; hot carriers; microwave bipolar transistors; microwave measurement; semiconductor device measurement; semiconductor device models; semiconductor device noise; shot noise; thermal noise; 5 GHz; AlGaAs-GaAs; AlGaAs/GaAs; Conexant; HBT measurements; HBTs; high frequency noise properties; hot electron noises; hybrid /spl Pi/ type model parameters; microwave noise sources; noise parameters; pad parasitics; scattering parameters; shot noises; small-signal modeling; thermal noises; two step method; Electrons; Fingers; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Noise figure; Noise measurement; Physics; Scattering parameters; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012288

Filename

1012288