DocumentCode
1844550
Title
An overview of stress free polishing of Cu with ultra low-k(k<2.0) films
Author
Pallinti, Jayanthi ; Lakshminarayanan, S. ; Barth, Will ; Wright, Peter ; Lu, Michael ; Reder, Steve ; Kwak, Leo ; Catabay, Wilbur ; Wang, David ; Ho, Fred
Author_Institution
Adv. Process Module Dev., LSI Logic Corp., Gresham, OR, USA
fYear
2003
fDate
2-4 June 2003
Firstpage
83
Lastpage
85
Abstract
An overview of the process performance of Stress Free Polishing technology (SFP) for copper removal at sub 90 nm nodes is presented in this paper. A brief description of the SFP process and polishing characteristics is provided along with electrical results. Dependence of post SFP copper surface quality on the roughness of the incoming films and post plating anneal conditions is also discussed.
Keywords
annealing; copper; dielectric thin films; polishing; surface roughness; 90 nm; Cu; copper surface quality; post plating annealing; stress free polishing; ultra low-k films; Chemical technology; Copper; Delamination; Etching; Large scale integration; Logic; Planarization; Rough surfaces; Stress; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN
0-7803-7797-4
Type
conf
DOI
10.1109/IITC.2003.1219719
Filename
1219719
Link To Document