Structural characterization of methylsilsesquioxane-based porous low-k thin films using X-ray porosimetry

Author

Lee, Hae-Jeong ; Soles, Christopher L. ; Liu, Da-Wei ; Bauer, Barry J. ; Lin, Eric K. ; Wu, Wen-li

Author_Institution

Polymers Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

fYear

2003

fDate

2-4 June 2003

Firstpage

103

Lastpage

105

Abstract

Methylsilsesquioxane based porous low-k dielectric films with different porogen loading have been characterized using X-ray porosimetry to determine their pore size distribution, average density, wall density and porosity. By varying the porogen content from 1 % to 30 %, the porosity and the average pore size changed from 12 % to 34 % and from 10 Å to 15 Å in radius, respectively. The wall density was found to be independent of the porogen content and it appeared that the porogen is not 100% effective in generating pores. Pore size of these samples was also obtained from small angle neutron scattering measurements and the results were found to be consistent with that from XRP.

Keywords

X-ray reflection; adsorption; density; desorption; dielectric materials; dielectric thin films; neutron diffraction; organic compounds; porosity; porous materials; 10 to 15 Å; X-ray porosimetry; X-ray reflection; adsorption; density; desorption; dielectric materials; dielectric thin films; methylsilsesquioxane based porous thin film; neutron scattering; porosity; Dielectric constant; Dielectric thin films; Neutron spin echo; Optical scattering; Particle scattering; Polymer films; Reflectivity; Storage area networks; Transistors; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International

Print_ISBN

0-7803-7797-4

Type

conf

DOI

10.1109/IITC.2003.1219725

Filename

1219725