DocumentCode
1844769
Title
MIM HfO2 low leakage capacitors for eDRAM integration at interconnect levels
Author
Mazoyer, Pascale ; Blonkowski, Serge ; Mondon, François ; Farcy, Alexis ; Torres, Juana ; Reimbold, Gilles ; Martin, François ; Damlencourt, Jean-François ; Morand, Yves ; Bicais, Nadine ; Descombes, Sophie
Author_Institution
STMicroelectron., Crolles, France
fYear
2003
fDate
2-4 June 2003
Firstpage
117
Lastpage
119
Abstract
An innovative 6 nm HfO2 MIM capacitor was integrated in interconnect levels for eDRAM functions. HfO2 layers or Al2O3-HfO2 stacks were deposited by ALCVD®. Using damascene process with TiN electrodes, this method is fully compatible with copper interconnects technology. No high temperature annealing is required to obtain dielectric performances satisfying eDRAM needs: 30 fF per cell, low leakages and high reliability.
Keywords
DRAM chips; MIM devices; alumina; capacitors; hafnium compounds; integrated circuit interconnections; integrated circuit reliability; leakage currents; titanium compounds; DRAM integration; MIM leakage capacitors; TiN electrodes; TiN-Al2O3-HfO2; annealing; copper interconnects; interconnect levels; reliability; Annealing; Capacitance measurement; Dielectric measurements; Electric variables measurement; Hafnium oxide; Leakage current; MIM capacitors; Roentgenium; Temperature; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
Print_ISBN
0-7803-7797-4
Type
conf
DOI
10.1109/IITC.2003.1219729
Filename
1219729
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