DocumentCode
1845663
Title
50-GHz Interconnect Design in Standard Silicon Technology
Author
Kleveland, Bendik ; Lee, Thomas H. ; Wong, S. Simon
Author_Institution
Center for Integrated Systems, Stanford University, Stanford, CA 94305
Volume
33
fYear
1998
fDate
35947
Firstpage
151
Lastpage
154
Abstract
Coplanar waveguides were fabricated in a process that emulates silicon CMOS technologies with 5 to 10 metal layers. The observed S21 loss of 0.3dB/mm at 50 GHz is among the lowest ever reported with standard Al interconnects on Si/SiO2. Optimum design parameters were counter-intuitive: in some frequency ranges, the lowest loss was achieved with relatively narrow lines over a low-resistivity substrate. This was exploited in the design of transmission lines that are fully compatible with a CMOS technology. The process emulation was calibrated with a commercial 4-layer Al/Cu CMOS technology.
Keywords
Artificial intelligence; CMOS process; CMOS technology; Coplanar waveguides; Dielectric substrates; Frequency; Impedance; Integrated circuit interconnections; Scattering parameters; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
ARFTG Conference Digest-Spring, 51st
Conference_Location
Baltimore, MD, USA
Print_ISBN
0-7803-5686-1
Type
conf
DOI
10.1109/ARFTG.1998.327295
Filename
4119984
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