• DocumentCode
    1845663
  • Title

    50-GHz Interconnect Design in Standard Silicon Technology

  • Author

    Kleveland, Bendik ; Lee, Thomas H. ; Wong, S. Simon

  • Author_Institution
    Center for Integrated Systems, Stanford University, Stanford, CA 94305
  • Volume
    33
  • fYear
    1998
  • fDate
    35947
  • Firstpage
    151
  • Lastpage
    154
  • Abstract
    Coplanar waveguides were fabricated in a process that emulates silicon CMOS technologies with 5 to 10 metal layers. The observed S21 loss of 0.3dB/mm at 50 GHz is among the lowest ever reported with standard Al interconnects on Si/SiO2. Optimum design parameters were counter-intuitive: in some frequency ranges, the lowest loss was achieved with relatively narrow lines over a low-resistivity substrate. This was exploited in the design of transmission lines that are fully compatible with a CMOS technology. The process emulation was calibrated with a commercial 4-layer Al/Cu CMOS technology.
  • Keywords
    Artificial intelligence; CMOS process; CMOS technology; Coplanar waveguides; Dielectric substrates; Frequency; Impedance; Integrated circuit interconnections; Scattering parameters; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ARFTG Conference Digest-Spring, 51st
  • Conference_Location
    Baltimore, MD, USA
  • Print_ISBN
    0-7803-5686-1
  • Type

    conf

  • DOI
    10.1109/ARFTG.1998.327295
  • Filename
    4119984