Title :
Effect of dopants in single crystal alumina on trapping properties and secondary electron yield
Author :
Moya, E.G. ; Moya, F. ; Boukheit, N. ; Tréheux, D. ; Juvé, D. ; Le Gressus, C.
Author_Institution :
Lab. SERMEC, Faculte des Sci. et Techniques de Saint Jerome, Marseille, France
Abstract :
The effect of doping elements in alumina should be a function of the different characteristics of the elements such as size, charge and electronegativity. These parameters could influence the properties of diffusion, of charge trapping, of mechanical toughness... . In this paper we have tried to relate the diffusion behaviour of three impurities: chromium, silver and copper, to the electrical and mechanical properties of doped alumina
Keywords :
alumina; Al2O3:Ag; Al2O3:Cr; Al2O3:Cu; ceramic; charge; charge trapping; dielectric properties; diffusion; dopants; doped alumina; doping elements; electrical properties; electronegativity; element size; fracture toughness; impurities; mechanical properties; mechanical toughness; secondary electron yield; single crystal alumina; trapping properties; Chromium; Copper; Doping; Electron beams; Electron traps; Mechanical factors; Scanning electron microscopy; Silver; Sputtering; Temperature;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1994., IEEE 1994 Annual Report., Conference on
Conference_Location :
Arlington, TX
Print_ISBN :
0-7803-1950-8
DOI :
10.1109/CEIDP.1994.591770
