Title :
A power semiconductor diode with an integrated forward-current sensor
Author :
Manduteanu, G.V.
Author_Institution :
S.C. Baneasa SA, Bucharest
Abstract :
A new type of power semiconductor device, i.e., a power semiconductor diode with an integrated forward-current sensor, is introduced. An integrator resistor is obtained, permitting the monitoring of the forward current of the diode. The dependence of the voltage on said resistor versus the forward-current is linear in the range of the limiting on-state current of the power diode, I FAV, to six times IFAV. The theoretical model proposed matches experimental results within 10% accuracy
Keywords :
electric current measurement; electric sensing devices; power electronics; semiconductor device models; semiconductor device testing; semiconductor diodes; accuracy; forward-current sensor; integrator resistor; model; monitoring; on-state current; power semiconductor diode; voltage; Cathodes; Current measurement; Frequency measurement; Geometry; Power measurement; Pulse measurements; Resistors; Semiconductor diodes; Sensor phenomena and characterization; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1993. APEC '93. Conference Proceedings 1993., Eighth Annual
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-0983-9
DOI :
10.1109/APEC.1993.290685
