• DocumentCode
    1849017
  • Title

    Pulse generator for ion implantation

  • Author

    Johannessen, P.R. ; Roland, W.F.

  • Author_Institution
    Megapulse Inc., Bedford, MA, USA
  • Volume
    1
  • fYear
    1997
  • fDate
    June 29 1997-July 2 1997
  • Firstpage
    198
  • Abstract
    Plasma source ion implantation (PSII) requires a high-power pulse generator (megawatts average power and peak pulse power of over 5 MVA) that is efficient, very reliable and robust. The robustness is required because plasma arcs, spits and sputters. Because operator equipment and vacuum failures occur, the modulator must be very tolerant to every possible insult. Megapulse, Inc. has developed a solid-state, high-power modulator that meets all these requirements. By combining soft switching with magnetic pulse compression, an extremely reliable, robust and efficient modulator is obtained. This technique is used in high-power Loran-C transmitters. These transmitters have been installed throughout the world.
  • Keywords
    ion implantation; Megapulse; high-power Loran-C transmitters; high-power pulse generator; ion implantation; magnetic pulse compression; operator equipment failures; plasma arcing; plasma source ion implantation; pulse generator; robust pulse generator; soft switching; solid-state high-power modulator; thyristors; vacuum failures; Ion implantation; Magnetic switching; Plasma immersion ion implantation; Plasma sources; Pulse compression methods; Pulse generation; Robustness; Soft magnetic materials; Solid state circuits; Transmitters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Pulsed Power Conference, 1997. Digest of Technical Papers. 1997 11th IEEE International
  • Conference_Location
    Baltimore, MA, USA
  • Print_ISBN
    0-7803-4213-5
  • Type

    conf

  • DOI
    10.1109/PPC.1997.679305
  • Filename
    679305