DocumentCode
1849017
Title
Pulse generator for ion implantation
Author
Johannessen, P.R. ; Roland, W.F.
Author_Institution
Megapulse Inc., Bedford, MA, USA
Volume
1
fYear
1997
fDate
June 29 1997-July 2 1997
Firstpage
198
Abstract
Plasma source ion implantation (PSII) requires a high-power pulse generator (megawatts average power and peak pulse power of over 5 MVA) that is efficient, very reliable and robust. The robustness is required because plasma arcs, spits and sputters. Because operator equipment and vacuum failures occur, the modulator must be very tolerant to every possible insult. Megapulse, Inc. has developed a solid-state, high-power modulator that meets all these requirements. By combining soft switching with magnetic pulse compression, an extremely reliable, robust and efficient modulator is obtained. This technique is used in high-power Loran-C transmitters. These transmitters have been installed throughout the world.
Keywords
ion implantation; Megapulse; high-power Loran-C transmitters; high-power pulse generator; ion implantation; magnetic pulse compression; operator equipment failures; plasma arcing; plasma source ion implantation; pulse generator; robust pulse generator; soft switching; solid-state high-power modulator; thyristors; vacuum failures; Ion implantation; Magnetic switching; Plasma immersion ion implantation; Plasma sources; Pulse compression methods; Pulse generation; Robustness; Soft magnetic materials; Solid state circuits; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference, 1997. Digest of Technical Papers. 1997 11th IEEE International
Conference_Location
Baltimore, MA, USA
Print_ISBN
0-7803-4213-5
Type
conf
DOI
10.1109/PPC.1997.679305
Filename
679305
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