DocumentCode :
1850539
Title :
Microgap gas chamber studies
Author :
Cho, H.S. ; Hong, W.S. ; Palaio, N. ; Kadyk, J. ; Luk, K.B. ; Mendez, V. Perez
Author_Institution :
Dept. of Nucl. Eng., California Univ., Berkeley, CA, USA
Volume :
1
fYear :
1995
fDate :
21-28 Oct 1995
Firstpage :
148
Abstract :
Hydrogenated amorphous silicon carbide (a-Si:C:H) has been used as an insulating support pedestal for the anode strip in microgap gas chambers (MGCs) in an attempt to make a thicker high quality insulating layer. MGCs having 2.3 or 4.6 μm thick a-Si:C:H and 2.0 μm thick SiO2 insulating layers have been built and tested. In this paper, the results of gas gains, strip damage by discharges, and preliminary aging studies are presented
Keywords :
carbon; hydrogen; insulating thin films; position sensitive particle detectors; proportional counters; silicon; SiC:H; a-Si:C:H; anode strip; gas gains; hydrogenated amorphous silicon carbide; insulating support pedestal; microgap gas chamber studies; preliminary aging studies; strip damage; Aging; Amorphous silicon; Anodes; Cathodes; Conductivity; Gas insulation; Laboratories; Microstrip; Strips; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference Record, 1995., 1995 IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3180-X
Type :
conf
DOI :
10.1109/NSSMIC.1995.504197
Filename :
504197
Link To Document :
بازگشت